DatasheetsPDF.com

BLW80

NXP

UHF power transistor

DISCRETE SEMICONDUCTORS DATA SHEET BLW80 UHF power transistor Product specification March 1993 Philips Semiconductors ...


BLW80

NXP


Octopart Stock #: O-124513

Findchips Stock #: 124513-F

Web ViewView BLW80 Datasheet

File DownloadDownload BLW80 PDF File




Description
DISCRETE SEMICONDUCTORS DATA SHEET BLW80 UHF power transistor Product specification March 1993 Philips Semiconductors Product specification UHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C in the u.h.f. and v.h.f. range for nominal supply voltages up to 13,5 V. T
More View he resistance stabilization of the transistor provides protection against device damage at severe load mismatch conditions. The transistor is housed in a 1⁄4" capstan envelope with a ceramic cap. BLW80 QUICK REFERENCE DATA R.F. performance up to Th = 25 °C in an unneutralized common-emitter class-circuit. MODE OF OPERATION c.w. c.w. VCE V 12,5 12,5 f MHz 470 175 PL W 4 4 > Gp dB 8,0 > typ. 15,0 η % 60 typ. 60 zi Ω 2,1 + j2,3 2,0 − j2,2 YL mS 57 − j56 51 −j48 PIN CONFIGURATION PINNING - SOT122A. PIN 1 2 DESCRIPTION collector emitter base emitter handbook, halfpage 4 1 3 3 4 2 Top view MBK187 Fig.1 Simplified outline. SOT122A. PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged. March 1993 2 Philips Semiconductors Product specification UHF power transistor RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-emitter voltage (VBE = 0) peak value Collector-emitter voltage (open base) Emitter-base voltage (open collector) Collector current (d.c.) Collector current (peak value); f > 1 MHz Total power dissipation (d.c. and r.f.) up to Tmb = 25 °C Storage temperature Operating junction temperature VCESM VCEO VEBO IC ICM Ptot Tstg Tj max max max max max max BLW80 36 V 17 V 4 V 1 A 3 A 17 W °C 200 °C −65 to +150 max handbook, halfpage 10 MGP938 MGP939 handbook, halfpage 30 IC (A) Prf (W) 20 Tmb = 25 °C r.f. power dissipation VCE ≤ 16.5 V f > 1 MHz short time operation during mismatch 1 Th = 70 °C 10 derate by 0.092 W/K continuous operation 10−1 1 10 VCE (V) 102 0 0 50 Th (°C) 100 Fig.2 D.C. soar. Fig.3 R.F. power dissipation. THERMAL RESISTANCE From junction to mounting base From mounting base to heatsink Rth j-mb Rth mb-h = = 10,3 K/W 0,6 K/W March 1993 3 Philips Semiconductors Product specification UHF power transistor CHARACTERISTICS Tj = 25 °C Breakdown voltages Collector-emitter voltage VBE = 0; IC = 10 mA Collector-emitter voltage open base; IC = 50 mA Emitter-base voltage open collector; IE = 4 mA Collector cut-off current VBE = 0; VCE = 17 V D.C. current gain (1) IC = 0,5 A; VCE = 5 V Collector-emitter saturation voltage (1) IC = 1,5 A; IB = 0,3 A Transition frequency at f = 500 MHz (1) IC = 0,5 A; VCE = 12,5 V IC = 1,5 A; VCE = 12,5 V Collector capacitance at f = 1 MHz IE = Ie = 0; VCB = 12,5 V Feedback capacitance at f = 1 MHz IC = 40 mA; VCE = 12,5 V Collector-stud capacitance N






Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)