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BLW83

NXP

HF/VHF power transistor

DISCRETE SEMICONDUCTORS DATA SHEET BLW83 HF/VHF power transistor Product specification August 1986 Philips Semiconduct...


NXP

BLW83

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DISCRETE SEMICONDUCTORS DATA SHEET BLW83 HF/VHF power transistor Product specification August 1986 Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor for use in transmitting amplifiers operating in the h.f. and v.h.f. bands, with a nominal supply voltage of 28 V. The transistor is specified for s.s.b. applications as linear amplifier in class-A and AB. The device is resistance stabilized and is guaranteed to withstand severe load mismatch conditions. Matched hFE groups are available on request. It has a 3/8" flange envelope with a ceramic cap. All leads are isolated from the flange. BLW83 QUICK REFERENCE DATA R.F. performance MODE OF OPERATION s.s.b. (class-A) s.s.b. (class-AB) PIN CONFIGURATION halfpage VCE V 26 28 f MHz 1,6 − 28 1,6 − 28 PL W 0 − 10 (P.E.P.) 3 − 30 (P.E.P.) > Gp dB 20 typ. 21 ηdt % − IC A 1,35 < d3 dB −40 typ. −30 Th °C 70 25 typ. 40 typ. 1,34 PINNING - SOT123 PIN 1 DESCRIPTION collector emitter base emitter 1 4 c handbook, halfpage 2 3 4 e b MBB012 2 3 MSB057 Fig.1 Simplified outline and symbol. PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged. August 1986 2 Philips Semiconductors Product specification HF/VHF power transistor RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-emitter voltage (VBE = 0) peak value Co...




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