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BLW90

Part Number	BLW90
Manufacturer	NXP
Description	UHF power transistor
Published	Mar 23, 2005
Detailed Description	DISCRETE SEMICONDUCTORS DATA SHEET BLW90 UHF power transistor Product speciﬁcation August 1986 Philips Semiconductors...
Datasheet	BLW90 PDF File

Overview

DISCRETE SEMICONDUCTORS DATA SHEET BLW90 UHF power transistor Product speciﬁcation August 1986 Philips Semiconductors Product speciﬁcation UHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor suitable for transmitting applications in class-A, B or C in the u.
h.
f.
and v.
h.
f.
range for a nominal supply voltage of 28 V.
The transistor is resistance stabilized and is guaranteed to withstand infinite VSWR at rated output power.
High reliability is ensured by a gold sandwich metallization.
The transistor is housed in a 1⁄4" capstan envelope with a ceramic cap.
All leads are isolated from the stud.
BLW90 QUICK REFERENCE DATA R.
F.
performance up to Th = 25 °C in an unneu...

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