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BLW90

NXP
Part Number BLW90
Manufacturer NXP
Description UHF power transistor
Published Mar 23, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET BLW90 UHF power transistor Product specification August 1986 Philips Semiconductors...
Datasheet PDF File BLW90 PDF File

BLW90
BLW90

Overview
DISCRETE SEMICONDUCTORS DATA SHEET BLW90 UHF power transistor Product specification August 1986 Philips Semiconductors Product specification UHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor suitable for transmitting applications in class-A, B or C in the u.
h.
f.
and v.
h.
f.
range for a nominal supply voltage of 28 V.
The transistor is resistance stabilized and is guaranteed to withstand infinite VSWR at rated output power.
High reliability is ensured by a gold sandwich metallization.
The transistor is housed in a 1⁄4" capstan envelope with a ceramic cap.
All leads are isolated from the stud.
BLW90 QUICK REFERENCE DATA R.
F.
performance up to Th = 25 °C in an unneutralized common-emitter class-B circuit MODE OF OPERATION c.
w.
VCE V 28 f MHz 470 PL W 4 Gp dB > 11 η % > 55 PIN CONFIGURATION PINNING - SOT122A.
PIN 1 2 DESCRIPTION collector emitter base emitter handbook, halfpage 4 1 3 3 4 2 Top view MBK187 Fig.
1 Simplified outline.
SOT122A.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic.
The device is entirely safe provided that the BeO disc is not damaged.
August 1986 2 Philips Semiconductors Product specification UHF power transistor RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-emitter voltage (peak value); VBE = 0 open base Emitter-base voltage (open collector) Collector current d.
c.
or average (peak value); f > 1 MHz Total power dissipation (d.
c.
and r.
f.
) up to Tmb = 25 °C Storage temperature Operating junction temperature IC; IC(AV) ICM Ptot Tstg Tj max.
max.
max.
max.
VCESM VCEO VEBO max.
max.
max.
BLW90 60 V 30 V 4 V 0,62 A 2,0 A 18,6 W 200 °C −65 to + 150 °C MGP660 handbook, halfpage 1 handbook, halfpage 30 MGP661 IC (A) Th = 70 °C Tmb = 25 °C Ptot (W) 20 ΙΙ 10 Ι 10−1 1 10 VCE (V) 102 0 0 50 Th (°C) 100 I Continuous d.
c.
and r.
f.
operation II Short-time operation during mismatch Fig.
2 D.
C.
SOAR.
Fig.
3 Power derating curve...


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