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BLW97

NXP
Part Number BLW97
Manufacturer NXP
Description HF power transistor
Published Mar 23, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET BLW97 HF power transistor Product specification August 1986 Philips Semiconductors ...
Datasheet PDF File BLW97 PDF File

BLW97
BLW97

Overview
DISCRETE SEMICONDUCTORS DATA SHEET BLW97 HF power transistor Product specification August 1986 Philips Semiconductors Product specification HF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor designed for use in class-A, AB and B operated high-power industrial and military transmitting equipment in the h.
f.
band.
The transistor offers excellent performance as a linear amplifier in s.
s.
b.
applications.
It is resistance stabilized and is made to withstand severe load-mismatch conditions.
All leads are isolated from the flange.
The transistors are supplied in matched hFE groups.
BLW97 QUICK REFERENCE DATA R.
F.
performance up to Th = 25 °C MODE OF OPERATION s.
s.
b.
(class-AB) PIN CONFIGURATION VCE V 28 IC(ZS) A 0,1 f MHz 1,6 − 28 PL W 175 (PEP) Gp dB > 11,5 ηdt % > 40 d3 dB < −30 d5 dB < −30 PINNING - SOT121B.
PIN DESCRIPTION collector emitter base emitter handbook, halfpage 4 3 1 2 3 4 1 2 MLA876 Fig.
1 Simplified outline.
SOT121B.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic.
The device is entirely safe provided that the BeO disc is not damaged.
August 1986 2 Philips Semiconductors Product specification HF power transistor RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-emitter voltage (peak value) VBE = 0 open base Emitter-base voltage (open collector) Collector current average peak value; f > 1 MHz Total d.
c.
power dissipation at Th = 25°C R.
F.
power dissipation f > 1 MHz; Th = 25°C Storage temperature Operating junction temperature Ptot(rf) Tstg Tj max.
max.
IC(AV) ICM Ptot(d.
c.
) max.
max.
max.
VCESM VCEO VEBO max.
max.
max.
BLW97 65 V 33 V 4 V 15 A 50 A 190 W 230 W 200 °C −65 to + 150 °C 102 handbook, halfpage MGP703 handbook, halfpage 350 MGP704 IC (A) Ptot (W) 250 ΙΙΙ 10 Th = 70 °C Tmb = 25 °C ΙΙ 150 Ι 1 1 10 VCE (V) 102 50 0 40 80 Th (°C) 120 I Continuous d.
c.
operation II Continuous r.
f.
operation (f > 1 Mhz).
III Short-t...


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