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BLW98

NXP
Part Number BLW98
Manufacturer NXP
Description UHF linear power transistor
Published Mar 23, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET BLW98 UHF linear power transistor Product specification August 1986 Philips Semicon...
Datasheet PDF File BLW98 PDF File

BLW98
BLW98

Overview
DISCRETE SEMICONDUCTORS DATA SHEET BLW98 UHF linear power transistor Product specification August 1986 Philips Semiconductors Product specification UHF linear power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in linear u.
h.
f.
amplifiers of TV transposers and transmitters in band IV-V, as well as for driver stages in tube systems.
FEATURES: • diffused emitter ballasting resistors for an optimum temperature profile; • gold sandwich metallization ensures excellent reliability.
The transistor has a 1⁄4" capstan envelope with ceramic cap.
All leads are isolated from the stud.
BLW98 QUICK REFERENCE DATA R.
F.
performance in linear amplifier MODE OF OPERATION class-A class-A Note 1.
Three-tone test method (vision carrier −8 dB, sound carrier −7 dB, sideband signal −16 dB), zero dB corresponds to peak sync level.
fvision MHz 860 860 VCE V 25 25 IC mA 850 850 Th °C 70 25 dim(1) dB −60 −60 Po sync (1) W > typ.
3,5 4,4 > typ.
Gp dB 6,5 7,0 PIN CONFIGURATION PINNING - SOT122A.
PIN 1 2 DESCRIPTION collector emitter base emitter handbook, halfpage 4 1 3 3 4 2 Top view MBK187 Fig.
1 Simplified outline.
SOT122A.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic.
The device is entirely safe provided that the BeO disc is not damaged.
August 1986 2 Philips Semiconductors Product specification UHF linear power transistor RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-emitter voltage (peak value); VBE = 0 open base Emitter-base voltage (open collector) Collector current d.
c.
(peak value); f > 1 MHz Total power dissipation at Th = 70 °C Storage temperature Operating junction temperature IC ICM Ptot Tstg Tj max.
max.
max.
max.
2 A 4 A 21,5 W 200 °C VCESM VCEO VEBO max.
max.
max.
50 V 27 V 3,5 V BLW98 −65 to +150 °C handbook, halfpage 10 MGP717 handbook, halfpage 40 MGP718 IC (A) (1) Ptot (W) 30 Th = 70 °C Tmb = 25 °C 1 20 10−1 1 10 VCE...


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