DatasheetsPDF.com

BLY87C

NXP
Part Number BLY87C
Manufacturer NXP
Description VHF power transistor
Published Mar 23, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET BLY87C VHF power transistor Product specification File under Discrete Semiconductors...
Datasheet PDF File BLY87C PDF File

BLY87C
BLY87C

Overview
DISCRETE SEMICONDUCTORS DATA SHEET BLY87C VHF power transistor Product specification File under Discrete Semiconductors, SC08a August 1986 Philips Semiconductors Product specification VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, h.
f.
and v.
h.
f.
transmitters with a nominal supply voltage of 13,5 V.
The transistor is resistance stabilized and is guaranteed to withstand severe load mismatch conditions with a supply over-voltage 16,5 V.
It has a 3/8" capstan envelope with a ceramic cap.
All leads are isolated from the stud.
BLY87C QUICK REFERENCE DATA R.
F.
performance up to Th = 25 °C in an unneutralized common-emitter class-B circuit MODE OF OPERATION c.
w.
c.
w.
VCE V 13,5 12,5 f MHz 175 175 PL W 8 8 > typ.
Gp dB 12,0 11,5 > typ.
η % 60 65 zi Ω 2,2 + j0,4 − YL mS 96 − j28 − PIN CONFIGURATION PINNING - SOT120 PIN DESCRIPTION collector emitter base emitter halfpage 4 1 2 3 1 3 handbook, halfpage c 4 b MBB012 e 2 MSB056 Fig.
1 Simplified outline and symbol.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic.
The device is entirely safe provided that the BeO disc is not damaged.
August 1986 2 Philips Semiconductors Product specification VHF power transistor RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-emitter voltage (VBE = 0) peak value Collector-emitter voltage (open base) Emitter-base voltage (open collector) Collector current (average) Collector current (peak value); f > 1 MHz R.
F.
power dissipation (f > 1 MHz); Tmb = 25 °C Storage temperature Operating junction temperature VCESM VCEO VEBO IC(AV) ICM Prf Tstg Tj max.
max.
max.
max.
max.
max.
max.
BLY87C 36 V 18 V 4 V 1,5 A 4,0 A 20 W 200 °C −65 to + 150 °C MGP820 handbook, halfpage 2 handbook, halfpage 30 MGP821 IC (A) 1.
5 Prf (W) 20 ΙΙΙ ΙΙ Th = 70 °C Tmb = 25 °C 10 derate by 0.
12 W/K 1 Ι 0.
1 W/K 0.
5 5 10 15 VCE (V) 20 0 ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)