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2N06L13

Infineon
Part Number 2N06L13
Manufacturer Infineon
Description Power-Transistor
Published Mar 8, 2018
Detailed Description OptiMOS® Power-Transistor Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up ...
Datasheet PDF File 2N06L13 PDF File

2N06L13
2N06L13

Overview
OptiMOS® Power-Transistor Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested IPD30N06S2L-13 Product Summary V DS R DS(on),max (SMD version) ID 55 V 13 mΩ 30 A PG-TO252-3-11 Type IPD30N06S2L-13 Package Marking PG-TO252-3-11 2N06L13 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) I D T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) Pulsed drain current2) I D,pulse T C=25 °C Avalanche energy, single pulse E AS I D=30A Gate source voltage V GS Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1 Value 30 30 200 240 ±20 136 -55 .
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+175 55/175/56 Unit A mJ V W °C Rev.
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0 page 1 2006-07-18 IPD30N06S2L-13 Parameter Symbol Conditions Thermal charact...


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