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TC58NVM9S3ETA00

Part Number	TC58NVM9S3ETA00
Manufacturer	Toshiba
Description	512M BIT (64M x 8 BIT) CMOS NAND E2PROM
Published	Mar 10, 2018
Detailed Description	TC58NVM9S3ETA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 512M BIT (64M × 8 BIT) CMOS NAND E2PROM DESCRI...
Datasheet	TC58NVM9S3ETA00 PDF File

Overview

TC58NVM9S3ETA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 512M BIT (64M × 8 BIT) CMOS NAND E2PROM DESCRIPTION The TC58NVM9S3E is a single 3.
3V 512Mbit (553,648,128bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 512blocks.
The device has a 2112-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 2112-byte increments.
The Erase operation is implemented in a single block unit (128 Kbytes + 4 Kbytes: 2112 bytes × 64 pages).
The TC58NVM9S3E is a serial-type memory device which utilizes the I/O pins for both address and data input/outp...

Similar Datasheet

TC58NVM9S3ETA00 512M BIT (64M x 8 BIT) CMOS NAND E2PROM - Toshiba
TC58NVM9S3ETAI0 512M BIT (64M x 8 BIT) CMOS NAND E2PROM - Toshiba

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