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BPW14N

TEMIC Semiconductors
Part Number BPW14N
Manufacturer TEMIC Semiconductors
Description Silicon NPN Phototransistor
Published Mar 23, 2005
Detailed Description BPW14N Silicon NPN Phototransistor Description BPW14N is a high speed silicon NPN epitaxial planar phototransistor in a ...
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BPW14N
BPW14N

Overview
BPW14N Silicon NPN Phototransistor Description BPW14N is a high speed silicon NPN epitaxial planar phototransistor in a standard TO–18 hermetically sealed metal case.
Its glass lens, featuring a viewing angle of ±12° makes it insensible to ambient straylight.
A base terminal is available to enable biasing and sensitivity control.
Features D D D D D D D D D Hermetically sealed case Lens window Narrow viewing angle ϕ = ± 10° Exact central chip alignment Base terminal available High photo sensitivity Fast response times Suitable for visible and near infrared radiation Selected into sensitivity groups 94 8486 Applications Detector in electronic control and drive circuits Absolute Maximum Ratings Tamb = 25_C Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Peak Collector Current Total Power Dissipation Junction Temperature Storage Temperature Range Soldering Temperature Thermal Resistance Junction/Ambient Thermal Resistance Junction/Case Test Conditions Symbol VCBO VCEO VEBO IC ICM Ptot Tj Tstg Tsd RthJA RthJC Value 32 32 5 50 100 310 150 –55.
.
.
+150 260 400 150 Unit V V V mA mA mW °C °C °C K/W K/W tp/T = 0.
5, tp 10 ms Tamb 25 °C x x t x5s TELEFUNKEN Semiconductors Rev.
A2, 15-Jul-96 1 (6) BPW14N Basic Characteristics Tamb = 25_C Parameter Collector Emitter Breakdown Voltage Collector Dark Current Collector Emitter Capacitance Collector Base Capacitance Angle of Half Sensitivity Wavelength of Peak Sensitivity Range of Spectral Bandwidth Collector Emitter Saturation Voltage Turn–On Time Turn–Off Time Cut–Off Frequency Test Conditions IC = 1 mA VCE = 20 V, E = 0 VCE = 5 V, f = 1 MHz, E=0 VCB = 5 V, f = 1 MHz, E=0 Symbol V(BR)CEO ICEO CCEO CCBO ϕ Min 32 Typ Max Unit V nA pF pF deg nm nm V IC = 1 mA, IB = 100 mA VS=5V, IC=5mA, RL=100W VS=5V, IC=5mA, RL=100W VS=5V, IC=5mA, RL=100W lp l0.
5 ton toff fc 1 5.
7 6.
5 ±10 780 520.
.
.
950 100 VCEsat 3.
2 2.
7 170 0.
3 ms ms kHz Type Dedicated Characteristics Tamb = 25_C Par...


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