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BPW82

Vishay Telefunken
Part Number BPW82
Manufacturer Vishay Telefunken
Description Silicon PIN Photodiode
Published Mar 23, 2005
Detailed Description BPW82 Vishay Telefunken Silicon PIN Photodiode Description BPW82 is a high speed and high sensitive PIN photodiode in a...
Datasheet PDF File BPW82 PDF File

BPW82
BPW82

Overview
BPW82 Vishay Telefunken Silicon PIN Photodiode Description BPW82 is a high speed and high sensitive PIN photodiode in a flat side view plastic package.
The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAlAs IR emitters (l p 800 nm).
The large active area combined with a flat case gives a high sensitivity at a wide viewing angle.
y Features D D D D D D D D Large radiant sensitive area (A=7.
5 mm2) Wide angle of half sensitivity ϕ = ± 65° High radiant sensitivity Fast response times Small junction capacitance Plastic case with IR filter Suitable for near infrared radiation Especially for GaAlAs emitters with lp=870nm 94 8480 Applications High speed photo detector Absolute Maximum Ratings Tamb = 25_C Parameter Reverse Voltage Power Dissipation Junction Temperature Storage Temperature Range Soldering Temperature Thermal Resistance Junction/Ambient Test Conditions Tamb Symbol VR PV Tj Tstg Tsd RthJA Value 60 215 100 –55.
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+100 260 350 Unit V mW °C °C °C K/W x 25 °C t x5s Document Number 81529 Rev.
2, 20-May-99 www.
vishay.
de • FaxBack +1-408-970-5600 1 (5) BPW82 Vishay Telefunken Basic Characteristics Tamb = 25_C Parameter Breakdown Voltage Reverse Dark Current Diode Capacitance Open Circuit Voltage Short Circuit Current Reverse Light Current Test Conditions IR = 100 mA, E = 0 VR = 10 V, E = 0 VR = 0 V, f = 1 MHz, E = 0 VR = 3 V, f = 1 MHz, E = 0 Ee = 1 mW/cm2, l = 870 nm Ee = 1 mW/cm2, l = 870 nm Ee = 1 mW/cm2, l = 870 nm, VR = 5 V Symbol V(BR) Iro CD CD Vo Ik Ira Min 60 Typ 2 70 25 350 38 45 ±65 950 790.
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1050 4x10–14 100 100 Max 30 40 Unit V nA pF pF mV mA mA deg nm nm W/√ Hz ns ns 43 Angle of Half Sensitivity Wavelength of Peak Sensitivity Range of Spectral Bandwidth Noise Equivalent Power VR = 10 V, l = 870 nm Rise Time VR = 10 V, RL = 1k W, l = 820 nm Fall Time VR = 10 V, RL = 1k W, l = 820 nm lp l0.
5 NEP tr tf ϕ Typical Characteristics (Tamb = 25_C unless otherwise specified) I ra rel – Relative Reverse Light Current 1000 I ro...


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