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MSQ108N06G

CITC
Part Number MSQ108N06G
Manufacturer CITC
Description N-Channel Enhancement Mode MOSFET
Published Mar 13, 2018
Detailed Description ■ Features • 60V/50A RDS(ON) = 10.8mΩ (max.) @ VGS= 10V RDS(ON) = 13.5mΩ (max.) @ VGS= 4.5V • Reliable and Rugged. • Lea...
Datasheet PDF File MSQ108N06G PDF File

MSQ108N06G
MSQ108N06G

Overview
■ Features • 60V/50A RDS(ON) = 10.
8mΩ (max.
) @ VGS= 10V RDS(ON) = 13.
5mΩ (max.
) @ VGS= 4.
5V • Reliable and Rugged.
• Lead free and green device available (RoHS compliant).
■ Application • Secondary side synchronous rectification.
• DC-DC converter.
• Motor control.
• Load Switching.
MSQ108N06G N-Channel Enhancement Mode MOSFET ■ Pin Description DDDD SS SG DFN5x6-8 (5,6,7,8) DD DD Pin 1 (4) G ■ Absolute Maximum Ratings (TA = 25OC unless otherwise specified) PARAMETER CONDITIONS Drain-Source Voltage Continuous Drain Current Pulsed Drain Current(Note:1) Gate-Source Voltage TC = 25OC TC = 100OC TC = 25OC Diode Continuous Forward Current Avalanche Current, single pulse (Note:2) TC = 25OC L=0.
5mH Avalanche Energy, single pulse (Note:2) L=0.
5mH Maximum Power Dissipation Thermal Resistance-Junction to Ambient(Note:3) TC = 25OC TC = 100OC t ≤ 10s Steady State Operating and Storage Temperature Range Maximum Power Dissipation Continuous Drain Current Th...


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