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MSG061P03G

CITC
Part Number MSG061P03G
Manufacturer CITC
Description P-Channel Enhancement Mode MOSFET
Published Mar 13, 2018
Detailed Description MSG061P03G P-Channel Enhancement Mode MOSFET ■ Features • -30V/-40A RDS(ON) = 6.1mΩ (max.) @ VGS= -10V RDS(ON) = 11mΩ (...
Datasheet PDF File MSG061P03G PDF File

MSG061P03G
MSG061P03G

Overview
MSG061P03G P-Channel Enhancement Mode MOSFET ■ Features • -30V/-40A RDS(ON) = 6.
1mΩ (max.
) @ VGS= -10V RDS(ON) = 11mΩ (max.
) @ VGS= -4.
5V • HBM ESD protection level pass 8KV.
• 100% UIS+Rg tested.
• Reliable and Rugged.
• Lead free and green device available (RoHS compliant).
Note: The diode connected between the gate and source serves only as protection against ESD.
No gate overvoltage rating is implied.
■ Application • Power management in notebook computer portable equipment and battery powered system.
■ Pin Description DDDD SS SG PIN 1 DFN3.
3x3.
3-8(Saw-EP) ( 5,6,7,8 ) D D DD (4) G ■ Absolute Maximum Ratings (TA = 25OC unless otherwise specified) PARAMETER CONDITIONS Drain-Sour...


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