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FNK06P20E

FNK
Part Number FNK06P20E
Manufacturer FNK
Description P-Channel Power MOSFET
Published Mar 18, 2018
Detailed Description FNK P-Channel Enhancement Mode Power MOSFET Description The FNK06P20E uses advanced trench technology and design to prov...
Datasheet PDF File FNK06P20E PDF File

FNK06P20E
FNK06P20E

Overview
FNK P-Channel Enhancement Mode Power MOSFET Description The FNK06P20E uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .
This device is well suited for high current load applications.
FNK06P20E General Features ● VDS =-60V,ID =-50A RDS(ON) <24mΩ@ VGS=-10V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation Schematic diagram Application ● Load switch Top View DFN5X6 Bottom View PIN1 Top View Package Marking and Ordering Information Device Marking Device Device Package FNK06P20E FNK06P20E DFN5*6-8L Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Continuous(TC=100℃) ID (100℃) Pulsed Drain Current Maximum Power D...


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