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FNK30H160D

FNK
Part Number FNK30H160D
Manufacturer FNK
Description N-Channel Power MOSFET
Published Mar 18, 2018
Detailed Description FNK30H160D FNK N-Channel Enhancement Mode Power MOSFET Description The FNK30H160 uses advanced trench technology and de...
Datasheet PDF File FNK30H160D PDF File

FNK30H160D
FNK30H160D

Overview
FNK30H160D FNK N-Channel Enhancement Mode Power MOSFET Description The FNK30H160 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
General Features ● VDS =30V,ID =160A RDS(ON) <2.
4 mΩ @ VGS=10V RDS(ON) <3.
5mΩ @ VGS=4.
5V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Schematic diagram Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply To-263 Top View Package Marking and Ordering Information Device Marking Device Device Package FNK30H160 FNK30H160D TO-263 Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-So...


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