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ME2306S

Part Number	ME2306S
Manufacturer	Matsuki
Description	N-Channel 30V (D-S) MOSFET
Published	Mar 20, 2018
Detailed Description	N-Channel 30V(D-S) MOSFET GENERAL DESCRIPTION The ME2306S is the N-Channel logic enhancement mode power field effect tra...
Datasheet	ME2306S PDF File

Overview

N-Channel 30V(D-S) MOSFET GENERAL DESCRIPTION The ME2306S is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone, notebook computer power management and other battery powered circuits, and low in-line power loss that are needed in a very small outline surface mount package.
ME2306S/ME2306S-G FEATURES FEATURES ● RDS(ON)≦37mΩ@ VGS =10V ● RDS(ON)≦49mΩ@VGS=4.
5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC ...

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