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ME2306DS-G

Part Number	ME2306DS-G
Manufacturer	Matsuki
Description	N-Channel 30V (D-S) MOSFET
Published	Mar 20, 2018
Detailed Description	ME2306DS/ME2306DS-G N-Channel 30V (D-S) MOSFET , ESD Protected GENERAL DESCRIPTION The ME2306DS is the N-Channel logic ...
Datasheet	ME2306DS-G PDF File

Overview

ME2306DS/ME2306DS-G N-Channel 30V (D-S) MOSFET , ESD Protected GENERAL DESCRIPTION The ME2306DS is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION (SOT-23) Top View FEATURES ● RDS(ON)≦31mΩ@VGS=10V ● RDS(ON)≦52mΩ@VGS=4.
5V ● ESD Protected ● ...

Similar Datasheet

ME2306DS N-Channel 30V (D-S) MOSFET - Matsuki
ME2306DS-G N-Channel 30V (D-S) MOSFET - Matsuki

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