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ME2318-G

Part Number	ME2318-G
Manufacturer	Matsuki
Description	N-Channel 20V (D-S) MOSFET
Published	Mar 20, 2018
Detailed Description	N-Channel 20-V (D-S) MOSFET GENERAL DESCRIPTION The ME2318-G is the N-Channel logic enhancement mode power field effect ...
Datasheet	ME2318-G PDF File

Overview

N-Channel 20-V (D-S) MOSFET GENERAL DESCRIPTION The ME2318-G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION (SOT-23) Top View ME2318-G FEATURES ● RDS(ON)≦34mΩ@VGS=4.
5V ● RDS(ON)≦45mΩ@VGS=2.
5V ● Super high density cell design for extremely ...

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