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ME2317D-G

Matsuki
Part Number ME2317D-G
Manufacturer Matsuki
Description P-Channel 30V (D-S) MOSFET
Published Mar 20, 2018
Detailed Description P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION The ME2317D-G is the P-Channel logic enhancement mode power field effect ...
Datasheet PDF File ME2317D-G PDF File

ME2317D-G
ME2317D-G

Overview
P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION The ME2317D-G is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where switching and low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION (SOT-23) Top View ME2317D-G FEATURES ● RDS(ON) ≦45mΩ@VGS=-10V ● RDS(ON) ≦53mΩ@VGS=-4.
5V ● RDS(ON) ≦80mΩ@VGS=-2.
5V ● Typical ESD performance ...


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