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ME2347-G

Matsuki
Part Number ME2347-G
Manufacturer Matsuki
Description P-Channel Enhancement Mode Mosfet
Published Mar 20, 2018
Detailed Description P-Channel Enhancement Mode Mosfet GENERAL DESCRIPTION The ME2347 is the P-Channel logic enhancement mode power field eff...
Datasheet PDF File ME2347-G PDF File

ME2347-G
ME2347-G

Overview
P-Channel Enhancement Mode Mosfet GENERAL DESCRIPTION The ME2347 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION (SOT-23) Top View ME2347/ME2347-G FEATURES ● RDS(ON)≦80mΩ@VGS=-10V ● RDS(ON)≦95mΩ@VGS=-4.
5V ● RDS(ON)≦120mΩ@VGS=-2.
5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● Portable Equipment ● Battery Powered System ● DC/DC Converter ● Load Switch ● DSC ● LCD Display inverter ...


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