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ME3466-G

Part Number	ME3466-G
Manufacturer	Matsuki
Description	N-Channel 150V (D-S) MOSFET
Published	Mar 20, 2018
Detailed Description	N-Channel 150V(D-S) MOSFET GENERAL DESCRIPTION The ME3466-G is the N-Channel logic enhancement mode power field effect t...
Datasheet	ME3466-G PDF File

Overview

N-Channel 150V(D-S) MOSFET GENERAL DESCRIPTION The ME3466-G is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone, notebook computer power management and other battery powered circuits, and low in-line power loss that are needed in a very small outline surface mount package.
PIN CONFIGURATION (SOT-26) Top View ME3466-G FEATURES FEATURES ● RDS(ON)≦375mΩ@ VGS =10V ● RDS(ON)≦400mΩ@ VGS= 6V ● Super high density cell design for extremely low RDS(ON) ● Exceptiona...

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ME3466-G N-Channel 150V (D-S) MOSFET - Matsuki

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