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ME3985DS-G

Part Number	ME3985DS-G
Manufacturer	Matsuki
Description	Dual P-Channel 20V (D-S) MOSFET
Published	Mar 20, 2018
Detailed Description	ME3985DS/ME3985DS-G Dual P-Channel 20V (D-S) MOSFET , ESD Protection GENERAL DESCRIPTION The ME3985DS is the Dual P-Ch...
Datasheet	ME3985DS-G PDF File

Overview

ME3985DS/ME3985DS-G Dual P-Channel 20V (D-S) MOSFET , ESD Protection GENERAL DESCRIPTION The ME3985DS is the Dual P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION FEATURES ● RDS(ON)≦120mΩ@VGS=-4.
5V ● RDS(ON)≦160mΩ@VGS=-2.
5V ● Super high densit...

Similar Datasheet

ME3985DS Dual P-Channel 20V (D-S) MOSFET - Matsuki
ME3985DS-G Dual P-Channel 20V (D-S) MOSFET - Matsuki

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