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ME2N70023E1-G

Part Number	ME2N70023E1-G
Manufacturer	Matsuki
Description	N-Channel MOSFET
Published	Mar 20, 2018
Detailed Description	N-Channel 60V (D-S) MOSFET, ESD Protection PGrEoNteEcRtAeLd DESCRIPTION The ME2N70023E1-G is the N-Channel logic enhance...
Datasheet	ME2N70023E1-G PDF File

Overview

N-Channel 60V (D-S) MOSFET, ESD Protection PGrEoNteEcRtAeLd DESCRIPTION The ME2N70023E1-G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits , and low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION Small SOT-23 Top View ME2N70023E1-G FEATURES ● RDS(ON) ≦4Ω@VGS=10V ● RDS(ON) ≦4Ω@VGS=4.
5V ● ESD Protection HBM≧1KV ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability ● Capable doing Cu wire bonding APPLICATIONS ● Power Management in Note book ● Portable Equipment ● Battery Powered System ● Load Switch ● DSC  Th Orderin...

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ME2N70023E1-G N-Channel MOSFET - Matsuki

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