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ME2N7002F1KW-G

Matsuki
Part Number ME2N7002F1KW-G
Manufacturer Matsuki
Description Dual N-Channel MOSFET
Published Mar 20, 2018
Detailed Description ME2N7002F1KW/ME2N7002F1KW -G Dual N-Channel 30V (D-S) MOSFET, ESD Protection GENERAL DESCRIPTION The ME2N7002F1KW is th...
Datasheet PDF File ME2N7002F1KW-G PDF File

ME2N7002F1KW-G
ME2N7002F1KW-G

Overview
ME2N7002F1KW/ME2N7002F1KW -G Dual N-Channel 30V (D-S) MOSFET, ESD Protection GENERAL DESCRIPTION The ME2N7002F1KW is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
PIN CONFIGURATION FEATURES ● RDS(ON)≦8Ω@VGS=4V ● RDS(ON)≦13Ω@VGS=2.
5V ● ESD Protection HBM 1KV ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● DC/DC Converter ● Load Switch ● LCD Display inverter (SOT-363) Top View e Ordering Information: ME...


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