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ME8205E-G

Matsuki
Part Number ME8205E-G
Manufacturer Matsuki
Description Dual N-Channel MOSFET
Published Mar 21, 2018
Detailed Description Dual N-Channel 20V (D-S) MOSFET GENERAL DESCRIPTION The ME8205E is the Dual N-Channel logic enhancement mode power field...
Datasheet PDF File ME8205E-G PDF File

ME8205E-G
ME8205E-G

Overview
Dual N-Channel 20V (D-S) MOSFET GENERAL DESCRIPTION The ME8205E is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION (SOT-26) Top View ME8205E/ME8205E-G FEATURES ● RDS(ON)≦22mΩ@VGS=4.
5V ● RDS(ON)≦23mΩ@VGS=4.
0V ● RDS(ON)≦26mΩ@VGS=3.
0V ● RDS(ON)≦29mΩ@VGS=2.
5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● Portable Equipment ● Battery Powered System ● DC/DC Converter ● Load Switch ...


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