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ME95N10T

Matsuki
Part Number ME95N10T
Manufacturer Matsuki
Description N-Channel MOSFET
Published Mar 22, 2018
Detailed Description N-Channel 100-V (D-S) MOSFET ME95N10T/ME95N10T-G GENERAL DESCRIPTION The ME95N10T is the N-Channel logic enhancement m...
Datasheet PDF File ME95N10T PDF File

ME95N10T
ME95N10T

Overview
N-Channel 100-V (D-S) MOSFET ME95N10T/ME95N10T-G GENERAL DESCRIPTION The ME95N10T is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on state resistance.
FEATURES ● RDS(ON)≦8.
5mΩ@VGS=10V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability PIN CONFIGURATION (TO-220) Top View * The Ordering Information: ME95N10T (Pb-free) ME95N10T-G (Green product-Halogen free) Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Parameter Symbol Maximum Ratings Drain-Source Voltage VDS 100 Gate-Source Voltage Continuous Drain Current* TC=25℃ TC=70℃ VGS ID ±25 124 104 Pulsed Drain Current Maximum Power Dissipation TC=25℃ TC=70℃ IDM PD 496 300 210 Junction and Storage Temperature Range TJ, Tstg -55 to 175 Thermal Resistance-Junction to Case** RθJC 0.
5 Unit V ...


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