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GT40WR21

Toshiba
Part Number GT40WR21
Manufacturer Toshiba
Description Silicon N-Channel IGBT
Published Mar 22, 2018
Detailed Description Discrete IGBTs Silicon N-Channel IGBT GT40WR21 GT40WR21 1. Applications (Note) • Dedicated to Voltage-Resonant Inverte...
Datasheet PDF File GT40WR21 PDF File

GT40WR21
GT40WR21

Overview
Discrete IGBTs Silicon N-Channel IGBT GT40WR21 GT40WR21 1.
Applications (Note) • Dedicated to Voltage-Resonant Inverter Switching Applications Note: The product(s) described herein should not be used for any other application.
2.
Features (1) 6.
5th generation (2) The RC-IGBT consists of a freewheeling diode monolithically integrated in an IGBT chip.
(3) Enhancement mode (4) High-speed switching IGBT : tf = 0.
15 µs (typ.
) (IC = 40 A) FWD : trr = 1.
0 µs (typ.
) (IF = 15 A) (5) Low saturation voltage : VCE(sat) = 2.
9 V (typ.
) (IC = 40 A) (6) High junction temperature : Tj = 175 (max) 3.
Packaging and Internal Circuit TO-3P(N) 1: Gate 2: Collector 3: Emitter ©2018 Toshiba Electronic Devices...


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