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HPU700R1K3SA

Part Number	HPU700R1K3SA
Manufacturer	HUAJING MICROELECTRONICS
Description	Silicon N-Channel Power MOSFET
Published	Mar 22, 2018
Detailed Description	Silicon N-Channel Power MOSFET HPU700R1K3SA General Description： HPU700R1K3SA, the silicon N-channel Enhanced MOSFETs, ...
Datasheet	HPU700R1K3SA PDF File

Overview

Silicon N-Channel Power MOSFET HPU700R1K3SA General Description： HPU700R1K3SA, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve switching performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.
The package type is TO-251, which accords with the RoHS standard.
VDSS ID PD(TC=25℃) RDS(ON)Typ Features： l Fast Switching l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）： ○R 700 V 6A 94 W 0.
95 Ω Symbol VDSS ID IDMa1 VGSS EAS a2 dv/dt a3 PD TJ，Tstg TL Parameter Drain-to-Source Voltage(VGS=0V) Continuous Drain Current Pulsed Drain Current Gate-to-Source Voltage Single Pulse Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation(T=25°C...

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HPU700R1K3SA Silicon N-Channel Power MOSFET - HUAJING MICROELECTRONICS

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