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HPU650R600SA

HUAJING MICROELECTRONICS
Part Number HPU650R600SA
Manufacturer HUAJING MICROELECTRONICS
Description Silicon N-Channel Power MOSFET
Published Mar 22, 2018
Detailed Description Silicon N-Channel Power MOSFET HPU650R600SA ○R General Description: HPU650R600SA, the silicon N-channel Enhanced MOSFE...
Datasheet PDF File HPU650R600SA PDF File

HPU650R600SA
HPU650R600SA


Overview
Silicon N-Channel Power MOSFET HPU650R600SA ○R General Description: HPU650R600SA, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve switching performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.
The package type is TO-251, which accords with the RoHS standard.
VDSS ID PD(TC=25℃) RDS(ON)typ Features: l Fast Switching l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test Applications: Power switch circuit of adaptor and charger.
Absolute(Tc= 25℃ unless otherwise specif...



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