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HPA600R550DN

Part Number	HPA600R550DN
Manufacturer	HUAJING MICROELECTRONICS
Description	Silicon N-Channel Power MOSFET
Published	Mar 22, 2018
Detailed Description	Silicon N-Channel Power MOSFET HPA600R550DN ○R General Description： HPA600R550DN, the silicon N-channel Enhanced VDM...
Datasheet	HPA600R550DN PDF File

Overview

Silicon N-Channel Power MOSFET HPA600R550DN ○R General Description： HPA600R550DN, the silicon N-channel Enhanced VDMOSFETs, is obtained by the double-shield Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.
The package form is TO-220F, which accords with the RoHS standard.
Features： l Superior switching performance l Low on resistance(Rdson≤0.
55Ω) l Low gate charge (Typical Data:27.
3nC) l Low reverse transfer capacitances(Typical:32.
1pF) l 100% Single pulse avalanche energy test Applications： Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2 dv/dt a3 PD TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage Single Pu...

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HPA600R550DN Silicon N-Channel Power MOSFET - HUAJING MICROELECTRONICS

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