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CS4J60B3-G

HUAJING MICROELECTRONICS
Part Number CS4J60B3-G
Manufacturer HUAJING MICROELECTRONICS
Description Silicon N-Channel Power MOSFET
Published Mar 22, 2018
Detailed Description Silicon N-Channel Power MOSFET CS4J60 B3-G General Description： CS4J60 B3-G, the silicon N-channel Enhanced MOSFETs, is...
Datasheet PDF File CS4J60B3-G PDF File

CS4J60B3-G
CS4J60B3-G

Overview
Silicon N-Channel Power MOSFET CS4J60 B3-G General Description： CS4J60 B3-G, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve switching performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.
The package type is TO-251, which accords with the RoHS standard.
VDSS ID PD(TC=25℃) RDS(ON)Typ Features： l Fast Switching l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test l Halogen Free Applications： Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherw...


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