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STGB10NC60KDT4

Part Number	STGB10NC60KDT4
Manufacturer	STMicroelectronics
Description	600V short-circuit rugged IGBT
Published	Mar 23, 2018
Detailed Description	STGB10NC60KDT4, STGD10NC60KDT4 STGF10NC60KD, STGP10NC60KD Datasheet 10 A, 600 V short-circuit rugged IGBT TAB 3 1 D2 PA...
Datasheet	STGB10NC60KDT4 PDF File

Overview

STGB10NC60KDT4, STGD10NC60KDT4 STGF10NC60KD, STGP10NC60KD Datasheet 10 A, 600 V short-circuit rugged IGBT TAB 3 1 D2 PAK TAB 23 1 DPAK TAB 3 2 1 TO-220FP TO-220 1 23 C(2, TAB) G(1) E(3) NG1E3C2T Features • Lower on voltage drop (VCE(sat)) • Lower Cres / Cies ratio (no cross-conduction susceptibility) • Very soft ultra fast recovery antiparallel diode • Short-circuit withstand time 10 μs Applications • High frequency motor controls • SMPS and PFC in both hard switch and resonant topologies • Motor drives Description These devices are very fast IGBTs developed using advanced PowerMESH technology.
This process guarantees an excellent trade-off between switching performance and low on-state behavior.
These devices are well-suited for resonant or soft-switching applications.
Product status links STGB10NC60KDT4 STGD10NC60KDT4 STGF10NC60KD STGP10NC60KD DS4320 - Rev 8 - May 2023 For further information contact your local STMicroelectronics sales office.
www.
st.
com STGB10NC60KDT4, STGD10NC60KDT4,STGF10NC60KD, STGP10NC60KD Electrical ratings 1 Electrical ratings Table 1.
Absolute maximum ratings Symbol Parameter D²PAK, TO-220 Value DPAK VCES Collector-emitter voltage (VGE = 0 V) 600 Continuous collector current at TC = 25 °C 20 IC(1) Continuous collector current at TC = 100 °C 10 ICL(2) Turn-off latching current 30 ICP(3) Pulsed collector current 30 VGE Gate-emitter voltage ±20 IF Diode RMS forward current at TC = 25 °C 10 IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 20 VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s, TC = 25 °C) tscw Short-circuit withstand time VCE = 0.
5, VCES, TJ = 125 °C, RG = 10 Ω, VGE = 12 V 10 PTOT Total power dissipation at TC = 25 °C 65 62 Tstg Storage temperature range TJ Operating junction temperature range -55 to 150 1.
Calculated according to the iterative formula: IC TC = RtℎJC × VCE TJ max − TC sat max TJ max ...

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