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HS70N06PA

HS
Part Number HS70N06PA
Manufacturer HS
Description N-CHANNEL MOSFET
Published Apr 2, 2018
Detailed Description 0 Amps, 60 Volts N-CHANNEL MOSFET HS70N06PA 1.Description The HS70N06 is three-terminal silicon device with current c...
Datasheet PDF File HS70N06PA PDF File

HS70N06PA
HS70N06PA

Overview
0 Amps, 60 Volts N-CHANNEL MOSFET HS70N06PA 1.
Description The HS70N06 is three-terminal silicon device with current conduction capability of about 70A, fast switching speed.
Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt.
It is mainly suitable electronic ballast, and low power switching 2.
Features „ RDS(ON)=15mΩ@VGS=10V.
„ Ultra low gate charge (typical 90nC) „ Low reverse transfer capacitance „ Fast switching capability „ 100％ avalanche energy specified „ Improved dv/dt capability 3.
Pin configuration TO-220 Pin 1 2 3 1 of 6 Function Gate Drain Source 0 Amps, 60 Volts N-CHANNEL MOSFET HS70N06PA 4.
Absolute maximum ratings Parameter Symbol Value Unit Drain to source voltage VDSS 60 V Gate to source voltage Continuous drain current Drain current pulsed (note1) TJ=25 ºC TJ=100 ºC VGSS ID ID IDM ±20 70 56 280 V A A A Single pulsed avalanche energy (note2) EAS 600 mJ Repetitive avalanche energy (note1)...


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