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BDW93A

Fairchild Semiconductor
Part Number BDW93A
Manufacturer Fairchild Semiconductor
Description Hammer Drivers/ Audio Amplifiers Applications
Published Mar 23, 2005
Detailed Description BDW93/A/B/C BDW93/A/B/C Hammer Drivers, Audio Amplifiers Applications • Power Darlington TR • Complement to BDW94, BDW9...
Datasheet PDF File BDW93A PDF File

BDW93A
BDW93A

Overview
BDW93/A/B/C BDW93/A/B/C Hammer Drivers, Audio Amplifiers Applications • Power Darlington TR • Complement to BDW94, BDW94A, BDW94B and BDW94C respectively 1 TO-220 2.
Collector 3.
Emitter 1.
Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : BDW93 : BDW93A : BDW93B : BDW93C VCEO Collector-Emitter Voltage : BDW93 : BDW93A : BDW93B : BDW93C Collector Current (DC) *Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature 45 60 80 100 45 60 80 100 12 15 0.
2 80 150 - 65 ~ 150 V V V V V V V V A A A W °C °C Value Units IC ICP IB PC TJ TSTG Thermal Characteristics TC=25°C unless otherwise noted Symbol Rθjc Parameter Thermal Resistance Junction to Case Value 1.
5 Units °C/W ©2000 Fairchild Semiconductor International Rev.
A, February 2000 BDW93/A/B/C Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCEO(sus) Parameter * Collector-Emitter Sustaining Voltage : BDW93 : BDW93A : BDW93B : BDW93C Collector Cut-off Current : BDW93 : BDW93A : BDW93B : BDW93C ICEO Collector Cut-off Current : BDW93 : BDW93A : BDW93B : BDW93C IEBO hFE Emitter Cut-off Current * DC Current Gain VCE = 45V, IB = 0 VCE = 60V, IB = 0 VCE = 80V, IB = 0 VCE = 100V, IB = 0 VEB = 5V, IC = 0 VCE = 3V, IC = 3A VCE = 3V, IC = 5A VCE = 3V, IC = 10A IC = 5A, IB = 20mA IC = 10A, IB = 100mA IC = 5A, IB = 20mA IC = 10A, IB = 100mA IF = 5A IF = 10A 1.
3 1.
8 1000 750 100 1 1 1 1 2 20000 2 3 2.
5 4 2 4 V V V V V V mA mA mA mA mA VCB = 45V, IE = 0 VCB = 60V, IE = 0 VCB = 80V, IE = 0 VCB = 100V, IE = 0 100 100 100 100 µA µA µA µA Test Condition IC = 100mA, IB = 0 Min.
45 60 80 100 Typ.
Max.
Units V V V V ICBO VCE(sat) VBE(sat) VF * Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage * Parallel Diode Forward Voltage * Pulse Test: PW=300µs, duty Cycle =1.
5% Pulsed ©2000 Fairchild Semiconductor International Rev.
A, February 2000 BDW93/A/B/...


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