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MMSS8550

Lunsure Electronic
Part Number MMSS8550
Manufacturer Lunsure Electronic
Description PNP Silicon Plastic-Encapsulate Transistor
Published Apr 11, 2018
Detailed Description Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 MMSS8550 Features • SOT-23 Pl...
Datasheet PDF File MMSS8550 PDF File

MMSS8550
MMSS8550


Overview
Shanghai Lunsure Electronic Technology Co.
,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 MMSS8550 Features • SOT-23 Plastic-Encapsulate Transistors • Capable of 0.
625Watts(Tamb=25OC) of Power Dissipation.
• Collector-current 1.
5A • Collector-base Voltage 40V • Operating and storage junction temperature range: -55OC to +150OC • Marking Code: Y2 Electrical Characteristics @ 25OC Unless Otherwise Specified Symbol Parameter OFF CHARACTERISTICS Min Max Units V(BR)CBO Collector-Base Breakdown Voltage (IC=100uAdc, IE=0) V(BR)CEO Collector-Emitter Breakdown Voltage (IC=0.
1mAdc, IB=0) V(BR)EBO Emitter-Base Breakdown Voltage (IE=100uAdc, IC=0) ICBO Collector Cutoff Current (VCB=40Vdc, IE=0) ICEO Collector Cutoff Current (VCE=20Vdc, IB=0) IEBO Emitter Cutoff Current (VEB=5.
0Vdc, IC=0) ON CHARACTERISTICS 40 --- Vdc 25 --- Vdc 6.
0 --- Vdc --- 0.
1 uAdc --- 0.
1 uAdc --- 0.
1 uAdc hFE(1) DC Current Gain (IC=100mAdc, VCE=1.
0Vdc) hFE(2) DC Current Gain (IC=800mAd...


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