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IXGT28N120BD1

IXYS
Part Number IXGT28N120BD1
Manufacturer IXYS
Description High Voltage IGBT
Published Apr 14, 2018
Detailed Description High Voltage IGBT w/ Diode IXGH28N120BD1 IXGT28N120BD1 VCES = IC25 VCE(sat) = ≤ tfi(typ) = 1200V 50A 3.5V 170ns T...
Datasheet PDF File IXGT28N120BD1 PDF File

IXGT28N120BD1
IXGT28N120BD1

Overview
High Voltage IGBT w/ Diode IXGH28N120BD1 IXGT28N120BD1 VCES = IC25 VCE(sat) = ≤ tfi(typ) = 1200V 50A 3.
5V 170ns TO-247AD (IXGH) Symbol VCES VCGR VGES VGEM IC25 IICF91000 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C ( Chip Capability ) TTCC = 100°C = 90°C TC = 25°C, 1ms VGE= 15V, TJ = 125°C, RG = 5Ω Clamped Inductive Load TC = 25°C Maximum Lead Temperature for Soldering 1.
6 mm (0.
062 in.
) from Case for 10 Mounting Torque (TO-247) TO-247 TO-286 Maximum Ratings 1200 1200 V V ±20 V ±30 V 50 A 28 A 10 A 150 A ICM = 120 0.
8 • VCES 250 A W -55 .
.
.
+150 150 -55 .
.
.
+150 °C °C °C 300 °C 260 °C 1.
13/10 6 4 Nm/lb.
in.
g g Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) VGE(th) IC = 250μA, VCE = VGE ICES VCE = VCES, VGE= 0V TJ = 125°C, Note1 IGES VCE = 0V, VGE = ±20V VCE(sat) IC = 28A, VGE = 15V, Note 2 TJ = 125°C Ch...


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