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2SA1235A

Part Number	2SA1235A
Manufacturer	GME
Description	Silicon Epitaxial Planar Transistor
Published	Apr 15, 2018
Detailed Description	Production specification Silicon Epitaxial Planar Transistor FEATURES  Small collector to emitter saturation voltage ...
Datasheet	2SA1235A PDF File

Overview

Production specification Silicon Epitaxial Planar Transistor FEATURES  Small collector to emitter saturation voltage VCE(sat)=-0.
3V max(@IC=-100mA,IB=-10mA).
Pb Lead-free  Excellent lineary DC forward current gain.
 Super mini package for easy mounting.
2SA1235A APPLICATIONS  PNP epitaxial type transistor designed for low frequency.
 Voltage amplify application.
ORDERING INFORMATION Type No.
Marking 2SA1235A ME/MF/MG SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO VCEO VEBO IC PC Tj,Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction and Storage Temperature -50 -50 -6 -200 150 -55 to +125 Units V V V mA mW ℃ C094 Rev.
A www.
gmesemi.
com 1 Production specification Silicon Epitaxial Planar Transistor 2SA1235A ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditio...

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