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2SC2859

Part Number	2SC2859
Manufacturer	GME
Description	Silicon Transistor
Published	Apr 15, 2018
Detailed Description	Silicon Epitaxial Planar Transistor FEATURES  Power dissipation：PC=150mW.  Excellent hFE linearity:hFE(2)=25 (VCE=6V,...
Datasheet	2SC2859 PDF File

Overview

Silicon Epitaxial Planar Transistor FEATURES  Power dissipation：PC=150mW.
 Excellent hFE linearity:hFE(2)=25 (VCE=6V,IC=400mA).
 Complementary to 2SA1182.
Pb Lead-free APPLICATIONS  Audio frequency general purpose amplifier applications.
Production specification 2SC2859 SOT-23 ORDERING INFORMATION Type No.
2SC2859 Marking WO/WY/WG Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Units VCBO VCEO VEBO IC PC Tj,Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction and Storage Temperature 35 V 30 V 5V 500 mA 150 mW -55 to +125 ℃ C100 Rev.
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