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EM6112K800V

eorex
Part Number EM6112K800V
Manufacturer eorex
Description 512K x 8 LP SRAM
Published Apr 16, 2018
Detailed Description 512Kx8 LP SRAM EM6112K800V Series GENERAL DESCRIPTION The EM6112K800V is a 4,194,304-bit low power CMOS static random a...
Datasheet PDF File EM6112K800V PDF File

EM6112K800V
EM6112K800V

Overview
512Kx8 LP SRAM EM6112K800V Series GENERAL DESCRIPTION The EM6112K800V is a 4,194,304-bit low power CMOS static random access memory organized as 524,288 words by 8 bits.
It is fabricated using very high performance, high reliability CMOS technology.
Its standby current is stable within the range of operating temperature.
The EM6112K800V is well designed for low power application, and particularly well suited for battery back-up nonvolatile memory application.
The EM6112K800V operates from a single power supply of 2.
7V ~ 3.
6V and all inputs and outputs are fully TTL compatible FEATURES z Fast access time: 45/55/70ns z Low power consumption: Operating current: 40/30/20mA (TYP.
) Standby current: -L/-LL version 20/2µA (TYP.
) z Single 2.
7V ~ 3.
6V power supply z All inputs and outputs TTL compatible z Fully static operation z Tri-state output z Data retention voltage: 1.
5V (MIN.
) z Package: 32-pin 450 mil SOP 32-pin 8mm x 20mm TSOP-I 32-pin 8mm x 13.
4mm STSOP 36-ball 6mm x 8mm TFBGA FUN...


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