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CP305V-BCW66H

Part Number	CP305V-BCW66H
Manufacturer	Central Semiconductor
Description	NPN Transistor
Published	Apr 17, 2018
Detailed Description	w w w. c e n t r a l s e m i . c o m CP305V-BCW66H NPN - Small Signal Transistor Die 0.8 Amp, 45 Volt The CP305V-BCW66...
Datasheet	CP305V-BCW66H PDF File

Overview

w w w.
c e n t r a l s e m i .
c o m CP305V-BCW66H NPN - Small Signal Transistor Die 0.
8 Amp, 45 Volt The CP305V-BCW66H is a silicon NPN small signal transistor designed for general purpose ampliﬁer and switching applications.
MECHANICAL SPECIFICATIONS: Die Size 31.
1 x 31.
1 MILS Die Thickness 7.
1 MILS Base Bonding Pad Size 5.
9 x 11.
8 MILS E B Emitter Bonding Pad Size 6.
5 x 13.
8 MILS Top Side Metalization Al – 13,000Å Back Side Metalization Au/As-Au – 9,000Å Scribe Alley Width 1.
96 MILS Wafer Diameter 5 INCHES Gross Die Per Wafer 17,534 MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Peak Base Current Operating and Storage Junction Temperature ELECTRICAL CHARACTERISTICS: (TA=25°C) SYMBOL TEST CONDITIONS ICBO VCB=75V IEBO VEB=4.
0V BVCBO IC=10µA BVCEO IC=10mA BVEBO IE=10µA VCE(SAT) IC=100mA, IB=10mA VCE(SAT) IC=500mA, IB...

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CP305V-BCW66H NPN Transistor - Central Semiconductor

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