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BF1202WR

NXP
Part Number BF1202WR
Manufacturer NXP
Description N-channel dual-gate PoLo MOS-FETs
Published Mar 23, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET BF1202; BF1202R; BF1202WR N-channel dual-gate PoLo MOS-FETs Product specification Su...
Datasheet PDF File BF1202WR PDF File

BF1202WR
BF1202WR

Overview
DISCRETE SEMICONDUCTORS DATA SHEET BF1202; BF1202R; BF1202WR N-channel dual-gate PoLo MOS-FETs Product specification Supersedes data of 1999 Dec 01 2000 Mar 29 Philips Semiconductors Product specification N-channel dual-gate PoLo MOS-FETs FEATURES • Short channel transistor with high forward transfer admittance to input capacitance ratio • Low noise gain controlled amplifier • Partly internal self-biasing circuit to ensure good cross-modulation performance during AGC and good DC stabilization.
APPLICATIONS • VHF and UHF applications with 3 to 9 V supply voltage, such as digital and analogue television tuners and professional communications equipment.
handbook, 2 columns 4 BF1202; BF1202R; BF1202WR PINNING PIN 1 2 3 4 DESCRIPTION source drain gate 2 gate 1 Top view MSB035 handbook, 2 columns 3 4 2 1 BF1202R marking code: LEp Fig.
2 Simplified outline (SOT143R).
3 page 3 4 DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected.
Integrated diodes between gates and source protect against excessive input voltage surges.
The BF1202, BF1202R and BF1202WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic packages respectively.
QUICK REFERENCE DATA SYMBOL VDS ID Ptot yfs Cig1-ss Crss F Xmod Tj PARAMETER drain-source voltage drain current total power dissipation forward transfer admittance input capacitance at gate 1 reverse transfer capacitance noise figure cross-modulation operating junction temperature CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling.
For further information, refer to Philips specs.
: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
2000 Mar 29 2 f = 1 MHz f = 800 MHz input level for k = 1% at 40 dB AGC CONDITIONS − − − 25 − − − 100 − MIN.
− − − 30 1.
7 15 1.
1 105 − TYP.
MAX.
10 30 200 40 2.
2 30 1.
8 − 150 UNIT V mA mW mS pF fF dB dBµV °C 1 Top view 2 MSB014 2 Top view 1 MSB842 BF1202 marking code: ...


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