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2SC1623W

GME
Part Number 2SC1623W
Manufacturer GME
Description NPN Transistor
Published Apr 20, 2018
Detailed Description NPN Silicon Epitaxial Planar Transistor FEATURES  High DC current gain: hFE=200TYP.  High voltage: VCEO=50V.  Power ...
Datasheet PDF File 2SC1623W PDF File

2SC1623W
2SC1623W

Overview
NPN Silicon Epitaxial Planar Transistor FEATURES  High DC current gain: hFE=200TYP.
 High voltage: VCEO=50V.
 Power dissipation.
(PC=200mW) Pb Lead-free APPLICATIONS  Audio frequency general purpose amplifier.
Production specification 2SC1623W ORDERING INFORMATION Type No.
Marking 2SC1623W L4/L5/L6/L7 SOT-323 Package Code SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage 60 VCEO Collector-Emitter Voltage 50 VEBO Emitter-Base Voltage 5 IC Collector Current -Continuous 100 Units V V V mA PC Tj,Tstg Collector Dissipation Junction and Storage Temperature 200 -55 to +150 mW ℃ F035 Rev.
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