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SMP730

SY Semiconductors
Part Number SMP730
Manufacturer SY Semiconductors
Description 400V N-Channel Power MOSFET
Published Apr 20, 2018
Detailed Description Features ◆6A,400V, RDS(on) =1.0 Ω@VGS=10V ◆Low gate charge ( typical 13 nC) ◆Low Crss ( typical 7pF) ◆100% avalanche tes...
Datasheet PDF File SMP730 PDF File

SMP730
SMP730

Overview
Features ◆6A,400V, RDS(on) =1.
0 Ω@VGS=10V ◆Low gate charge ( typical 13 nC) ◆Low Crss ( typical 7pF) ◆100% avalanche tested ◆Fast switching ◆Improved dv/dt capability Application ◆Electronic Ballast ◆Active power factor correction ◆ Switching mode power supply SMP730 400V N-Channel Power MOSFET Absolute Maximum Ratings(Tc=25°C unless otherwise noted) Symbol VDSS VGS ID IDM PD Tj TSTG EAS IAR Drain-source Voltage Gate-source Voltage Parameters Continuous Drain Current Drain Current-Pulsed ① Power Dissipation Junction Temperature Storage Temperature Single Pulse Avalanche Energy② Avalanche Current① --TC=25°C --TC=100°C --(TC = 25°C) -- Derate above 25°C Value 400 ±30 6 3.
6 24 75 0.
6...


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