DatasheetsPDF.com

BF2040W

Infineon Technologies AG
Part Number BF2040W
Manufacturer Infineon Technologies AG
Description Silicon N-Channel MOSFET Tetrode
Published Mar 23, 2005
Detailed Description Silicon N-Channel MOSFET Tetrode • For low noise , high gain controlled input stages up to 1GHz • Operating voltage 5 V ...
Datasheet PDF File BF2040W PDF File

BF2040W
BF2040W

Overview
Silicon N-Channel MOSFET Tetrode • For low noise , high gain controlled input stages up to 1GHz • Operating voltage 5 V • Pb-free (RoHS compliant) package • Qualified according AEC Q101 BF2040.
.
.
ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Package Pin Configuration BF2040 SOT143 1=S 2=D 3=G2 4=G1 - - BF2040R SOT143R 1=D 2=S 3=G1 4=G2 - - BF2040W SOT343 1=D 2=S 3=G1 4=G2 - - Maximum Ratings Parameter Drain-source voltage Continuous drain current Gate 1/ gate 2-source current Gate 1 (external biasing) Total power dissipation TS ≤ 76 °C, BF2040, BF2040R TS ≤ 94 °C, BF2040W Storage temperature Channel temperature Thermal Resistance Symbol VDS ID ±IG1/2SM +VG1SE Ptot Tstg Tch Value 8 40 10 7 200 200 -55 .
.
.
150 150 Parameter Channel - soldering point1) BF2040, BF2040R BF2040W Symbol Rthchs Value ≤ 370 ≤ 280 1For calculation of RthJA please refer to Application Note Thermal Resistance Marking NFs NFs NFs Unit V mA V mW °C Unit K/W 1 2007-06-01 BF2040.
.
.
Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min.
typ.
max.
DC Characteristics Drain-source breakdown voltage ID = 20 µA, VG1S = 0 , VG2S = 0 Gate1-source breakdown voltage +IG1S = 10 mA, VG2S = 0 , VDS = 0 Gate2-source breakdown voltage +IG2S = 10 mA, VG1S = 0 , VDS = 0 Gate1-source leakage current VG1S = 5 V, VG2S = 0 , VDS = 0 Gate2-source leakage current VG2S = 5 V, VG1S = 0 , VDS = 0 Drain current VDS = 5 V, VG1S = 0 , VG2S = 4 V Drain-source current VDS = 5 V, VG2S = 4 V, RG1 = 100 kΩ Gate1-source pinch-off voltage VDS = 5 V, VG2S = 4 V, ID = 20 µA Gate2-source pinch-off voltage VDS = 5 V, ID = 20 µA V(BR)DS 10 - -V +V(BR)G1SS 6 - 15 +V(BR)G2SS 6 - 15 +IG1SS - - 50 nA +IG2SS - - 50 IDSS - - 50 µA IDSX - 15 - mA VG1S(p) 0.
3 0.
6 -V VG2S(p) 0.
3 0.
7 - 2 2007-06-01 BF2040.
.
.
Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min.
typ.
...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)