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BF420

Part Number	BF420
Manufacturer	NXP
Description	NPN high-voltage transistors
Published	Mar 23, 2005
Detailed Description	DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BF420; BF422 NPN high-voltage transistors Product speciﬁcati...
Datasheet	BF420 PDF File

Overview

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BF420; BF422 NPN high-voltage transistors Product speciﬁcation Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1996 Dec 09 Philips Semiconductors Product speciﬁcation NPN high-voltage transistors FEATURES • Low feedback capacitance.
APPLICATIONS • Class-B video output stages in colour television and professional monitor equipment.
DESCRIPTION NPN transistors in a TO-92 plastic package.
PNP complements: BF421 and BF423.
1 handbook, halfpage 2 3 BF420; BF422 PINNING PIN 1 2 3 base collector emitter DESCRIPTION 2 1 3 MAM259 Fig.
1 Simplified outline (TO-92) and symbol.
QUICK REFERENCE DATA SYMBOL VCBO PARAMETER collector-base voltage BF420 BF422 VCEO collector-emitter voltage BF420 BF422 ICM Ptot hFE Cre fT peak collector current total power dissipation DC current gain feedback capacitance transition frequency Tamb ≤ 25 °C IC = 25 mA; VCE = 20 V IC = ic = 0; VCE = 30 V; f = 1 MHz IC = 10 mA; VCE = 10 V; f = 100 MHz open base − − − − 50 − 60 300 250 100 830 − 1.
6 − pF MHz V V mA mW open emitter − − 300 250 V V CONDITIONS MIN.
MAX.
UNIT 1996 Dec 09 2 Philips Semiconductors Product speciﬁcation NPN high-voltage transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL VCBO BF420 BF422 VCEO collector-emitter voltage BF420 BF422 VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1.
Transistor mounted on a printed-circuit board.
THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1.
Transistor mounted on a printed-circuit board.
CHARACTERISTICS Tj = 25 °C unless otherwise speciﬁed.
SYMBOL ICBO PARAMETER collector cut-off current IE = 0; VCB = 200 V IE = 0; VCB = 200 V; Tj = 150 °C IEBO hFE VCEsat Cre fT emitter cut-off current DC current gain collector-emitter saturation voltage feedback capacitance transition frequency IC = 0; VEB = 5 V IC = 25 mA; VCE = 20 V IC = 30 mA; IB = 5 mA IC = ic = 0; VCE = 30 V; f = 1 MHz IC = 10 mA; VCE = 10 V; f = 100 MHz CON...

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