DatasheetsPDF.com

BF422

Part Number	BF422
Manufacturer	Siemens Semiconductor Group
Description	NPN Silicon Transistors
Published	Mar 23, 2005
Detailed Description	NPN Silicon Transistors With High Reverse Voltage High breakdown voltage q Low collector-emitter saturation voltage q Lo...
Datasheet	BF422 PDF File

Overview

NPN Silicon Transistors With High Reverse Voltage High breakdown voltage q Low collector-emitter saturation voltage q Low capacitance q Complementary types: BF 421, BF 423 (PNP) q BF 420 BF 422 2 3 1 Type BF 420 BF 422 Marking – Ordering Code Q62702-F531 Q62702-F495 Pin Configuration 1 2 3 E C B Package1) TO-92 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage RBE = 2.
7 k Collector-base voltage Emitter-base voltage Collector current Peak base current Junction temperature Storage temperature range Thermal Resistance Junction - ambient Junction - case2) Rth JA Rth JC ≤ ≤ Symbol VCE0 VCER VCB0 VEB0 IC IBM Tj Tstg Values BF 420 – 300 300 Unit BF 422 250 – 250 5 50 100 830 150 – 65 … + 150 mW ˚C mA V Total power dissipation, TC = 88 ˚C Ptot 150 75 K/W 1) 2) For detailed information see chapter Package Outlines.
Mounted on Al heat sink 15 mm × 25 mm × 0.
5 mm.
Semiconductor Group 1 5.
91 BF 420 BF 422 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified.
Parameter Symbol min.
DC characteristics Collector-emitter breakdown voltage IC = 1 mA BF 422 Collector-emitter breakdown voltage IC = 10 µA, RBE = 2.
7 k BF 420 Collector-base breakdown voltage IC = 10 µA BF 420 BF 422 Emitter-base breakdown voltage, IE = 10 µA Collector cutoff current VCB = 200 V Collector cutoff current VCE = 200 V, RBE = 2.
7 kΩ , TA = 150 ˚C Emitter cutoff current, VEB = 5 V DC current gain IC = 100 µA, VCE = 20 V IC = 25 mA, VCE = 20 V Collector-emitter saturation voltage1) IC = 25 mA, Tj =150 ˚C AC characteristics Transition frequency IC = 10 mA, VCE = 10 V, f = 20 MHz Output capacitance VCB = 30 V, f = 1 MHz fT Cobo – – 100 0.
8 – – MHz pF V(BR)CE0 V(BR)CER V(BR)CB0 300 250 V(BR)EB0 ICB0 ICER IEB0 hFE 15 50 VCEsatRF – – – – – – 20 V 5 – – – – – – – – – – – – 10 10 10 – nA µA Values typ.
max.
Unit 250 300 – – – – V 1) Pulse test: t ≤ 300 µs, D ≤ 2 %.
Semiconductor Group 2 BF 420 BF 422 Total power dissipation Ptot = f (TA; TC) ...

Similar Datasheet

BF401M SMD Gas Discharge Tube - LangTuo
BF410 LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR - Siemens Semiconductor Group
BF410A N-channel silicon field-effect transistors - NXP
BF410A LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR - Siemens Semiconductor Group
BF410B N-channel silicon field-effect transistors - NXP
BF410B LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR - Siemens Semiconductor Group
BF410C N-channel silicon field-effect transistors - NXP
BF410C LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR - Siemens Semiconductor Group
BF410D N-channel silicon field-effect transistors - NXP
BF410D LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR - Siemens Semiconductor Group

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)