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IXTA90N055T2

IXYS
Part Number IXTA90N055T2
Manufacturer IXYS
Description Power MOSFET
Published Apr 26, 2018
Detailed Description TrenchT2TM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated IXTY90N055T2 IXTA90N055T2 IXTP90N055T2 Symbol VDSS...
Datasheet PDF File IXTA90N055T2 PDF File

IXTA90N055T2
IXTA90N055T2

Overview
TrenchT2TM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated IXTY90N055T2 IXTA90N055T2 IXTP90N055T2 Symbol VDSS VDGR VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C 1.
6mm (0.
062in.
) from Case for 10s Plastic Body for 10 seconds Mounting Torque (TO-220) TO-252 TO-263 TO-220 Maximum Ratings 55 55 V V ± 20 V 90 A 75 A 230 A 50 A 300 mJ 150 W -55 .
.
.
+175 175 -55 .
.
.
+175 300 260 1.
13 / 10 0.
35 2.
50 3.
00 °C °C °C °C °C Nm/lb.
in.
g g g Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 250μA IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 150°C RDS(on) VGS = 10V, ID = 25A, Notes 1, 2 Characteristic Values Min.
Typ.
Max.
55 V 2.
0 4.
0 V ±200 nA 2 μA 200 μA 7.
0 8.
4 mΩ © 2012 IXYS CORPORA...


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