DatasheetsPDF.com

BLL6H1214L-250

Ampleon
Part Number BLL6H1214L-250
Manufacturer Ampleon
Description LDMOS L-band radar power transistor
Published Apr 26, 2018
Detailed Description BLL6H1214L-250; BLL6H1214LS-250 LDMOS L-band radar power transistor Rev. 4 — 1 September 2015 Product data sheet 1. Pr...
Datasheet PDF File BLL6H1214L-250 PDF File

BLL6H1214L-250
BLL6H1214L-250

Overview
BLL6H1214L-250; BLL6H1214LS-250 LDMOS L-band radar power transistor Rev.
4 — 1 September 2015 Product data sheet 1.
Product profile 1.
1 General description 250 W LDMOS power transistor intended for L-band radar applications in the 1.
2 GHz to 1.
4 GHz range.
Table 1.
Test information Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 100 mA; in a class-AB production test circuit.
Mode of operation f VDS PL Gp D tr tf (GHz) (V) (W) (dB) (%) (ns) (ns) pulsed RF 1.
2 to 1.
4 50 250 17 55 15 5 CAUTION This device is sensitive to ElectroStatic Discharge (ESD).
Therefore care should be taken during transport and handling.
1.
2 Features and benefits  Typical pulsed RF performance at a frequency of 1.
2 GHz to 1.
4 GHz, a supply voltage of 50 V, an IDq of 100 mA, a tp of 300 s with  of 10 %:  Output power = 250 W  Power gain = 17 dB  Efficiency = 55 %  Easy power control  Integrated ESD protection  High flexibility with r...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)