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BLL8H1214LS-500

Ampleon
Part Number BLL8H1214LS-500
Manufacturer Ampleon
Description LDMOS L-band radar power transistor
Published Apr 26, 2018
Detailed Description BLL8H1214L-500; BLL8H1214LS-500 LDMOS L-band radar power transistor Rev. 3 — 1 September 2015 Product data sheet 1. Pr...
Datasheet PDF File BLL8H1214LS-500 PDF File

BLL8H1214LS-500
BLL8H1214LS-500

Overview
BLL8H1214L-500; BLL8H1214LS-500 LDMOS L-band radar power transistor Rev.
3 — 1 September 2015 Product data sheet 1.
Product profile 1.
1 General description 500 W LDMOS power transistor intended for L-band radar applications in the 1.
2 GHz to 1.
4 GHz range.
Table 1.
Test information Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 150 mA; in a class-AB production test circuit.
Test signal f VDS PL Gp D tr tf (GHz) (V) (W) (dB) (%) (ns) (ns) pulsed RF 1.
2 to 1.
4 50 500 17 50 20 6 1.
2 Features and benefits  Easy power control  Integrated dual side ESD protection  High flexibility with respect to pulse formats  Excellent ruggedness  High efficienc...


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