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BLL9G1214LS-600

Ampleon
Part Number BLL9G1214LS-600
Manufacturer Ampleon
Description LDMOS L-band radar power transistor
Published Apr 26, 2018
Detailed Description BLL9G1214L-600; BLL9G1214LS-600 LDMOS L-band radar power transistor Rev. 1 — 27 November 2017 Product data sheet 1. Pr...
Datasheet PDF File BLL9G1214LS-600 PDF File

BLL9G1214LS-600
BLL9G1214LS-600

Overview
BLL9G1214L-600; BLL9G1214LS-600 LDMOS L-band radar power transistor Rev.
1 — 27 November 2017 Product data sheet 1.
Product profile 1.
1 General description 600 W LDMOS power transistor for L-band radar applications in the frequency range from 1.
2 GHz to 1.
4 GHz.
Table 1.
Typical performance Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 400 mA; in a class-AB demo test circuit.
Test signal f VDS PL(3dB) Gp D (GHz) (V) (W) (dB) (%) pulsed RF 1.
2 to 1.
4 32 600 19 60 1.
2 Features and benefits  High efficiency  Excellent ruggedness  Designed for L-band operation  Excellent thermal stability  Easy power control  Integrated dual sided ESD protection ...


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